Schematic cross-section of gallium nitride (GaN)-based epitaxial wafer... | Download Scientific Diagram
![Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide<xref rid="cpb_26_12_124210_fn1" ref-type="fn">*</xref><fn id="cpb_26_12_124210_fn1"> <label>*</label> <p>Project supported by the ... Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide<xref rid="cpb_26_12_124210_fn1" ref-type="fn">*</xref><fn id="cpb_26_12_124210_fn1"> <label>*</label> <p>Project supported by the ...](http://cpb.iphy.ac.cn/article/2017/1916/cpb_26_12_124210/cpb_26_12_124210_f1.jpg)
Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide<xref rid="cpb_26_12_124210_fn1" ref-type="fn">*</xref><fn id="cpb_26_12_124210_fn1"> <label>*</label> <p>Project supported by the ...
![A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN: Applied Physics Letters: Vol 107, No 15 A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN: Applied Physics Letters: Vol 107, No 15](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/1.4933257&id=images/medium/1.4933257.figures.f1.gif)
A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN: Applied Physics Letters: Vol 107, No 15
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Thermal analysis of GaN-based laser diode mini-array<xref rid="cpb_27_9_094208_fn1" ref-type="fn">*</xref><fn id="cpb_27_9_094208_fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos ...
Picosecond tunable gain-switched blue pulses from GaN laser diodes with nanosecond current injections
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Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers | SpringerLink
![Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers: Journal of Applied Physics: Vol 130, No 17 Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers: Journal of Applied Physics: Vol 130, No 17](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/5.0069567&id=images/medium/5.0069567.figures.online.highlight_f1.jpg)
Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers: Journal of Applied Physics: Vol 130, No 17
Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chips | ACS Applied Electronic Materials
![KYOCERA Develops New GaN Laser Chip, World's Smallest* to be Mass-Produced from Silicon Working Substrate | Business Wire KYOCERA Develops New GaN Laser Chip, World's Smallest* to be Mass-Produced from Silicon Working Substrate | Business Wire](https://mms.businesswire.com/media/20221107006204/en/1628855/5/New_process2.jpg)